Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Test Conditions

Min

Typ

Max

Unit

I D

Off-state current

V D =V DRM , V GK =0

T J =25 ℃

T J =85 ℃

-5

uA

-50

uA

V (BO)

Breakover voltage

2/10us,I PP =-56A,R S =45 Ω ,V GG =-48V,C G =220nF

2/10us,I PP =-100A,R S =50 Ω ,V GG =-48V,C G =220nF

1.2/50us,I PP =-53A,R S =47 Ω ,V GG =-48V,C G =220nF

1.2/50us,I PP =-96A,R S =52 Ω ,V GG =-48V,C G =220nF

-57

-60

-60

-64

V

V GK(BO)

Gate-cathode impulse

Breakover voltage

2/10us,I PP =-56A,R S =45 Ω ,V GG =-48V,C G =220nF

2/10us,I PP =-100A,R S =50 Ω ,V GG =-48V,C G =220nF

1.2/50us,I PP =-53A,R S =47 Ω ,V GG =-48V,C G =220nF

1.2/50us,I PP =-96A,R S =52 Ω ,V GG =-48V,C G =220nF

9

12

12

16

V

V F

Forward voltage

I F = 5 A, T W = 200 us

3

V

V FRM

Peak forward recovery

voltage

2/10us,I PP =-56A,R S =45 Ω ,V GG =-48V,C G =220nF

2/10us,I PP =-100A,R S =50 Ω ,V GG =-48V,C G =220nF

1.2/50us,I PP =-53A,R S =47 Ω ,V GG =-48V,C G =220nF

1.2/50us,I PP =-96A,R S =52 Ω ,V GG =-48V,C G =220nF

6

8

8

12

V

I H

Holding current

I T = -1 A, di/dt = 1A/ms, V GG =-48 V

-150

mA

I GKS

Gate reverse current

V GG = V GK = V GKRM , V KA = 0

T J =25 ℃

T J =85 ℃

-5

uA

-50

uA

I GT

Gate trigger current

I T = -3 A, t p(g) ≥ 20 us, V GG = -48V

5

mA

V GT

Gate-cathode trigger

voltage

I T = -3 A, t p(g) ≥ 20 us, V GG = -48V

2.5

V

Q GS

Gate switching charge

1.2/50us,I PP =-53A,R S =47 Ω ,V GG =-48V, C G =220nF

0.1

uC

C KA

Cathode-anode off-

State capacitance

F=1 MHz, V d =1V, I G =0

V D = -3 V

100

pF

V D =-48 V

50

pF