ID     Off-state current

 

VD = VDRM, VGK = 0                 TJ = 25 °C

 

 

 

-5

μA

 

 

-50

μA

V(BO)  Ramp breakover

voltage

 

UL 497B, dv/dt ≤±100 V/μs,

di/dt = ±10 A/μs,VGG = -100 V,       TJ = 25 °C

Maximum ramp value = ±10 A

 

 

 

-112

 

V

V(BO)  Impulse

Breakover voltage

2/10 μs, ITM = -27 A, di/dt = -27 A/μs, RS = 50 Ω, VGG = -100 V,(see Note 3)

 

 

-115

V

Gate-cathode

VGK(BO)  impulse

breakover voltage

2/10 μs, ITM = -27 A, di/dt = -27 A/μs, RS = 50 Ω, VGG = -100 V,(see Note 3)

 

 

 

 

15

 

V

VF    Forward voltage

IF = 5 A, tw = 200 μs

 

 

3

V

VFRM  Ramp peak forward recovery voltage

UL 497B, dv/dt ≤±100 V/μs,

di/dt = ±10 A/μs,                    TJ = 25 °C

Maximum ramp value = ±10 A

 

 

 

5

 

V

VFRM  Impulse peak forward

recovery voltage

2/10 μs, ITM = -27 A, di/dt = -27 A/μs, RS = 50 Ω,

(see Note 3)

 

 

 

 

12

 

V